Fujitsu Develops World’s First Gallium-Nitride HEMT for Power Supply – Power-saving structure features complete current-interruption during stand-by

fujitsu_logo.jpg   Fujitsu announced the development of a new structure for gallium-nitride high electron-mobility transistors that can minimize power loss in power supplies, thus enabling reduced power consumption of electronic equipment such as IT hardware and home electronics. The new technology blocks the flow of current from power supplies in stand-by mode and produces high-density current when turned on, and has the potential to cut power consumption of electronic equipment by one-third

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